Title

An Analytical Subthreshold Current Model For Pocket-Implanted Nmosfets

Keywords

Modeling; MOSFET; Pocket implantation; Subthreshold current

Abstract

An analytical subthreshold current model for metal oxide semiconductor field effect transistors (MOSFETs) with pocket implantation is presented. The model is developed based on considering an averaged localized pileup of channel dopants near the source and drain ends of channel to account for the pocket implantation effect and to derive the channel potential using a pseudo-two-dimensional (2-D) method. This, together with the conventional drift-diffusion theory, leads to the development of a subthrehold current model for pocket-implanted MOS devices. Model verification is carried out using data measured from a set of pocket-implanted NMOSFETs fabricated from a 0.17-μm, DRAM process. Very good agreement is obtained between the model calculations and measurement results.

Publication Date

6-1-2003

Publication Title

IEEE Transactions on Electron Devices

Volume

50

Issue

6

Number of Pages

1475-1479

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TED.2003.813340

Socpus ID

0042164628 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0042164628

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