Title

Optimization Of On-Chip Esd Protection Structures For Minimal Parasitic Capacitance

Abstract

Diodes are key components in on-chip electrostatic discharge (ESD) protection design. As the operating frequency of the microchip being protected against the ESD continues to increase, the parasitic capacitance associated with the diodes in the ESD structure starts to impose problems for RF operation. This paper presents a systematic approach to optimize the diode structure for minimal parasitic capacitance based on the requirements of breakdown voltage and heat dissipation. Device simulator Atlas with mix-mode simulation capability is calibrated against measurement data and used to carry out the optimization. An optimized diode structure with a parasitic capacitance of less than 30 fF at an operating frequency of 10 GHz and ESD charging voltage of 1 kV has been suggested. Furthermore, a case study to implement and optimize the ESD protection structure based on an existing 0.13-μm CMOS technology has been presented and verified. © 2003 Elsevier Science Ltd. All rights reserved.

Publication Date

5-1-2003

Publication Title

Microelectronics Reliability

Volume

43

Issue

5

Number of Pages

725-733

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0026-2714(03)00026-X

Socpus ID

0038665291 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0038665291

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