Title

Role Of Oxidizer In The Chemical Mechanical Planarization Of The Ti/Tin Barrier Layer

Keywords

Barrier layer; CMP; Oxidizer; Removal rate

Abstract

The electrochemical parameters controlling the polishing rates of Ti and TiN are investigated. In this paper, alumina containing slurry was studied at pH 4 with 5% H2O2 as the oxidizer. Passive film formation on the surface during chemical mechanical polishing (CMP) plays an important role. To understand the oxide growth mechanism and the surface chemistry, X-ray photoelectron spectroscopy was performed. It was found that in the absence of an oxidizer, the removal of Ti and TiN is mainly due to mechanical abrasion of oxide layer or metal layer. However, in the presence of 5% H2O2 as the oxidizer, different removal behavior was observed for Ti and TiN. The removal mechanism of Ti during CMP is mainly due to mechanical abrasion of the oxide layer whereas for TiN it could be attributed to the formation of metastable soluble peroxide complexes. © 2003 Elsevier Science B.V. All rights reserved.

Publication Date

5-1-2003

Publication Title

Microelectronic Engineering

Volume

65

Issue

4

Number of Pages

478-488

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0167-9317(03)00177-1

Socpus ID

0037623281 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0037623281

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