Title
Worst-Case Analysis And Statistical Simulation Of Mosfet Devices Based On Parametric Test Data
Keywords
BSIM3v3 model; Digital circuits; Latin hypercube sampling; MOSFET devices; Parametric test data; Principal component analysis; Statistical simulation; Worst-case analysis
Abstract
A practical and efficient approach for estimating the MOSFET device and circuit performance distributions is presented. The proposed method is based on the Latin hypercube sampling technique and direct extracting and utilizing the statistical information obtained from a population of parametric test data. Using this approach, a set of worst-case models taking into account data correlations and equal probability constraints is developed. The procedure allows for a systematical and accurate way to predict the performance spread and worst case of MOSFET circuits, as well as a greatly reduced computation time for statistical simulation. Measured data of two digital circuits are included in support of the modeling work. © 2001 Elsevier Science Ltd. All rights reserved.
Publication Date
9-1-2001
Publication Title
Solid-State Electronics
Volume
45
Issue
9
Number of Pages
1537-1547
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1016/S0038-1101(01)00177-0
Copyright Status
Unknown
Socpus ID
0035447691 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0035447691
STARS Citation
Zhang, Qiang; Liou, Juin J.; and McMacken, John, "Worst-Case Analysis And Statistical Simulation Of Mosfet Devices Based On Parametric Test Data" (2001). Scopus Export 2000s. 184.
https://stars.library.ucf.edu/scopus2000/184