Title
Monolithic Integration Of Dual Layer Optics On Broad Area Semiconductor Lasers
Abstract
A broad area InGaAs semiconductor laser diode with two monolithically integrated optical elements, a 275nm period diffraction grating and multi-level refractive lens, is presented. We discuss the potential of dual optics integration for beam shaping of high power lasers and amplifiers. © 2000 Optical Society of America.
Publication Date
1-1-2003
Publication Title
OSA Trends in Optics and Photonics Series
Volume
88
Number of Pages
663-664
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
8744248885 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/8744248885
STARS Citation
Vaissié, Laurent; Mohammed, Waleed; and Johnson, E. G., "Monolithic Integration Of Dual Layer Optics On Broad Area Semiconductor Lasers" (2003). Scopus Export 2000s. 1900.
https://stars.library.ucf.edu/scopus2000/1900