Title

A Physical Model Of Time-Dependent Dielectric Breakdown In Copper Metallization

Keywords

"E" model; Copper diffusion; Copper metallization; Reliability; TDDB lifetime

Abstract

A physical model of copper interconnect dielectric breakdown is studied. The general continuity equation about Cu+ diffusion and drift is evaluated. An analytical expression to predict the lifetime of TDDB is developed. The model predictions agree well with the experimental data at different electric fields and temperatures. The lifetime is proportional to the exponential of electric field under an acceleration stress and consistent with the "E" model.

Publication Date

1-1-2003

Publication Title

IEEE International Reliability Physics Symposium Proceedings

Volume

2003-January

Number of Pages

282-286

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/RELPHY.2003.1197758

Socpus ID

84955259509 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84955259509

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