Title

Rf Mosfet: Recent Advances And Future Trends

Abstract

Recent advances in CMOS processing, continuous scaling of gate length, and progress in SOI (Silicon on Insulator) have stirred serious discussions on the suitability of MOSFETs for RF/microwave applications. This paper covers the recent advances and current status of CMOS as the dominating technology in VLSI, future trend of RF MOSFETs, and applications of MOSFETs in RF electronics. Despite some lingering debates, the prospects for RF MOSFETs with operating frequencies in the lower GHz range are very promising.

Publication Date

1-1-2003

Publication Title

2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003

Number of Pages

185-192

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/EDSSC.2003.1283511

Socpus ID

84892315153 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84892315153

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