Title
Rf Mosfet: Recent Advances And Future Trends
Abstract
Recent advances in CMOS processing, continuous scaling of gate length, and progress in SOI (Silicon on Insulator) have stirred serious discussions on the suitability of MOSFETs for RF/microwave applications. This paper covers the recent advances and current status of CMOS as the dominating technology in VLSI, future trend of RF MOSFETs, and applications of MOSFETs in RF electronics. Despite some lingering debates, the prospects for RF MOSFETs with operating frequencies in the lower GHz range are very promising.
Publication Date
1-1-2003
Publication Title
2003 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC 2003
Number of Pages
185-192
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/EDSSC.2003.1283511
Copyright Status
Unknown
Socpus ID
84892315153 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84892315153
STARS Citation
Liou, Juin J. and Schwierz, Frank, "Rf Mosfet: Recent Advances And Future Trends" (2003). Scopus Export 2000s. 1971.
https://stars.library.ucf.edu/scopus2000/1971