Title

Utilizing The Sims Technique In The Study Of Grain Boundary Diffusion Along Twist Grain Boundaries In The Cu(Ni) System

Keywords

Cu(Ni); Grain boundary diffusion; SIMS; Twist grain boundaries

Abstract

The secondary ion mass spectrometry (SIMS) technique was used to study grain boundary diffusion along (100) twist grain boundaries in the Cu(Ni) system. Concentration profiles of Ni down Cu twist grain boundaries with nominal disorientation angles of 10°, Σ5 (36.87°), and 45°, were measured using the SIMS technique. The average activation energy for grain boundary diffusion, Qb, was found to be 245 ± 22, 140 ± 10, and 102 ± 15 kJ/mol, for the 10°, Σ5, and 45° twist grain boundaries, respectively. The average grain boundary diffusion pre-exponential term, sδDbo, was found to be 9.6 ± 1.24 × 10-9, 1.1 ± 0.17 × 10-14, and 1.3 ± 0.36 × 10-16m3/s, for the 10°, Σ5, and 45° twist grain boundaries, respectively. © 2002 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.

Publication Date

12-3-2002

Publication Title

Acta Materialia

Volume

50

Issue

20

Number of Pages

5079-5084

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S1359-6454(02)00362-2

Socpus ID

0037016013 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0037016013

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