Title
Wet Chemical Etching Of Ligao2 And Lialo2
Abstract
The effects of temperature and wet chemical etching solution on the etch rate LiGaO2 and LiAlO2 were investigated. The solutions studied were H2SO4, H3PO4, and HCl. Etch rates from 500 to 73,000 Å/min and 100 to 9,500 Å/min were obtained for LiGaO2 and LiAlO2, respectively. Arrhenius plots were used to examine the rate-limiting step for each etchant.
Publication Date
6-1-2001
Publication Title
Electrochemical and Solid-State Letters
Volume
4
Issue
6
Number of Pages
-
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1149/1.1368737
Copyright Status
Unknown
Socpus ID
0035383689 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0035383689
STARS Citation
Hsu, C. H.; Ip, K. P.; and Johnson, J. W., "Wet Chemical Etching Of Ligao2 And Lialo2" (2001). Scopus Export 2000s. 235.
https://stars.library.ucf.edu/scopus2000/235