Title
Analyzing The Simultaneous Switching Noise Due To Internal Gate Switching
Abstract
In this paper, the ground bounce noise due to internal gate switching is studied. It has been found that both power-rail and ground-rail pin impedances are important in evaluating internal ground bounces. Based on the lumped-model analysis taking into account the parasitic effects of MOS transistors, a novel analytical model is developed which accurately accounts for both power rail and ground rail pin impedances. The proposed model is compared with the previous work and validated by SPICE simulation results.
Publication Date
12-1-2002
Publication Title
Midwest Symposium on Circuits and Systems
Volume
1
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0036979296 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0036979296
STARS Citation
Yang, Li; Yuan, J. S.; and Hagedorn, M., "Analyzing The Simultaneous Switching Noise Due To Internal Gate Switching" (2002). Scopus Export 2000s. 2355.
https://stars.library.ucf.edu/scopus2000/2355