Title

Skin Effect Of On-Chip Copper Interconnects On Electromigration

Keywords

Copper interconnect; Electromigration; Mean time to failure; Reduced vacancy concentration; Skin effect

Abstract

A model to evaluate the skin effect of on-chip copper interconnects on electromigration was presented. The skin effect is an accelerated factor for interconnects failure at high frequency. The effect was found to increase the driving force of electromigration and shorten the failure time beyond 90 GHz in the structure considered.

Publication Date

12-1-2002

Publication Title

Solid-State Electronics

Volume

46

Issue

12

Number of Pages

2269-2272

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0038-1101(02)00232-0

Socpus ID

0036891198 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0036891198

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