Title

Analysis Of Reliability Of Algaas/Gaas Hbts Based On Device Simulation

Keywords

Device simulation; Heterojunction bipolar transistor; Reliability analysis

Abstract

Reliability of GaAs-based heterojunction bipolar transistor (HBT) is studied based on two-dimensional device simulation. The main objective is to identify the types and locations of defects in the HBT which are responsible for different base current instabilities observed experimentally in post-stress HBTs. Pre- and post-stress measurement data reported in the literature are included to demonstrate the usefulness of the analysis. © 2001 Elsevier Science Ltd.

Publication Date

5-1-2001

Publication Title

Solid-State Electronics

Volume

45

Issue

5

Number of Pages

727-734

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0038-1101(01)00090-9

Socpus ID

0035333959 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0035333959

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