Title

Laser Doping Of Silicon Carbide Substrates

Keywords

Direct-write; Laser doping; Semiconductor; Silicon carbide; Wide bandgap

Abstract

A direct-write laser conversion technique was used to produce n-type and p-type doped tracks on SiC substrates. Polycrystalline and single-crystal SiC substrates were investigated. The tracks irradiated in an inert gas exhibit a higher electrical resistance than those generated in dopant-containing atmospheres. The effects of various processing parameters, such as the laser-matter interaction time, laser-beam characteristics, number of exposures to the laser beam, and ambient gas in the laser processing chamber, are examined. The laser conversion technique can be used for selective-area doping of silicon carbide substrates to build semiconductor devices for high-temperature applications.

Publication Date

1-1-2002

Publication Title

Journal of Electronic Materials

Volume

31

Issue

3

Number of Pages

200-208

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1007/s11664-002-0207-3

Socpus ID

0036502994 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0036502994

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