Title
Soft Breakdown And Hot Carrier Reliability Of Cmos Rf Mixer And Redesign
Abstract
In this paper, CMOS RF down-conversion mixer circuit hot-carrier (HC) and soft breakdown (SBD) reliability estimation and redesign is presented. First of all, MOS transistor reliability under analog operation was evaluated by experiment. The mixer circuit operation conditions for the occurrence of HC and SBD are analyzed, and circuit performance model are presented to relate the device degradation to circuit performance degradation. Finally, we propose mixer circuit redesign strategies, which reduce the HC and SBD problem. Simulation shows improved noise performance with the similar gain, IIP3 and power consumption.
Publication Date
1-1-2002
Publication Title
IEEE MTT-S International Microwave Symposium Digest
Volume
1
Number of Pages
509-512
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/MWSYM.2002.1011668
Copyright Status
Unknown
Socpus ID
0036073271 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0036073271
STARS Citation
Li, Qiang; Li, Wei; and Zhang, Jinlong, "Soft Breakdown And Hot Carrier Reliability Of Cmos Rf Mixer And Redesign" (2002). Scopus Export 2000s. 3011.
https://stars.library.ucf.edu/scopus2000/3011