Title
Far-Ir Semiconductor Laser For Future Thz-Carrier Free-Space Communications
Keywords
Far-infrared; Laser; Laser communication; Satellite communication; Submillimeter wavelength; Terahertz
Abstract
New experimental results are presented for the far-infrared p-Ge laser that enhance its prospects for application to secure satellite and short-range terrestrial free-space communications on a THz carrier. An optical means of gain modulation has been discovered that may potentially permit far-IR pulse generation via active mode-locking with low drive power. A compact high-field permanent-magnet assembly is demonstrated for applying the magnetic field required for laser operation without need of liquid helium. Compact light-weight laser-excitation electronics have been designed to run off a low voltage direct current supply.
Publication Date
1-1-2002
Publication Title
Proceedings of SPIE - The International Society for Optical Engineering
Volume
4635
Number of Pages
57-64
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1117/12.464109
Copyright Status
Unknown
Socpus ID
0036045498 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0036045498
STARS Citation
Peale, R. E.; Muravjov, A. V.; and Nelson, E. W., "Far-Ir Semiconductor Laser For Future Thz-Carrier Free-Space Communications" (2002). Scopus Export 2000s. 3019.
https://stars.library.ucf.edu/scopus2000/3019