Title
Electron Backscattering Diffraction Investigation Of Focused Ion Beam Surfaces
Keywords
Amorphous; Cu; Dual beam; EBSD; EBSP; FIB; FIB damage; Image quality; Si; TRIM
Abstract
A focused ion beam (FIB) instrument has been used to mill surfaces in single-crystal Si and single-crystal Cu for subsequent electron backscattering diffraction (EBSD) analysis. The FIB cuts were performed using a 30 keV and a 5 keV Ga+ ion beam at a stage tilt of 20° to provide a readily obtainable 70° surface for direct EBSD investigation in a scanning electron microscope (SEM). The quality of the patterns is related to the amount of FIB damage induced in the Cu and Si. These or similar methods should be directly transferable to a FIB/SEM dual beam instrument equipped with an EBSD detector.
Publication Date
1-1-2002
Publication Title
Journal of Electronic Materials
Volume
31
Issue
1
Number of Pages
33-39
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1007/s11664-002-0169-5
Copyright Status
Unknown
Socpus ID
0011194826 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0011194826
STARS Citation
Matteson, T. L.; Schwarz, S. W.; and Houge, E. C., "Electron Backscattering Diffraction Investigation Of Focused Ion Beam Surfaces" (2002). Scopus Export 2000s. 3045.
https://stars.library.ucf.edu/scopus2000/3045