Title

Structural Comparison Of Thin Film Absorber Layer Fabricated On Ss And Ti Substrates

Abstract

Copper indium gallium selenide sulfide, CuIn1-xGa xSe2-ySy (CIGSS) absorber layer was prepared on stainless steel (SS) and SiO2-coated titanium substrates. Comparative study was carried out to analyze the variation in the crystal quality depending on the substrate. Identical parameters were used for deposition and selenization/sulfurization of metallic precursors. This paper presents the observations made on the basis of surface morphology using scanning electron microscopy, crystal quality by x-ray diffraction and chemical composition and concentration-depth profiles by x-ray energy dispersive spectroscopy and Auger electron spectroscopy respectively. Film fabricated on both the substrate had chalcopyrite structure with variation of stoichiometry as well as morphology. Selenization/sulfurization cycle must be modified depending upon the substrate to obtain high quality CIGSS film. Copyright © 2005 by ASME.

Publication Date

12-1-2005

Publication Title

International Solar Energy Conference

Number of Pages

491-494

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1115/ISEC2005-76178

Socpus ID

33748239116 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/33748239116

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