Title

Laser-Synthesis Of Optical Structures In Silicon Carbide

Abstract

A laser direct write process is used to selectively modify the surface and internal optical properties of silicon carbide substrates. This process enables the fabrication of embedded structures, which are the building blocks for optical and integrated optical devices. Laser metallization, a phase transformation process without the addition of metal, and laser doping, both n-type and p-type, are used to modify the optical reflectivity and transmission of select surface and embedded regions of silicon carbide (SiC) wafers. The reflectivities of these laser synthesized structures are increased by 40% compared to the parent wafer. Laser doping increases the absorption coefficient by three orders of magnitude compared to the parent wafer; this is a factor of 16 greater than that observed for conventionally doped (e.g., ion implantation) wafers. Optical properties were measured at 1064 nm laser wavelengths using intensities (∼25W/cm2), which are much less than used in laser-synthesis (∼90MW/cm2).

Publication Date

12-1-2005

Publication Title

Proceedings - Electrochemical Society

Volume

PV 2005-04

Number of Pages

262-271

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

31844441969 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/31844441969

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