Title
Toward Hot-Hole Thz Lasers In Homoepitaxial Si And Gaas With Layered Doping
Keywords
Epitaxy; Far infrared; Gallium arsenide; Germanium; Laser; Silicon; Terahertz
Abstract
A recently proposed THz laser concept in homoepitaxially grown p-Ge with layered doping is reviewed. Prospects for realizing a similar design in Si or GaAs are considered.
Publication Date
12-1-2005
Publication Title
Proceedings of SPIE - The International Society for Optical Engineering
Volume
5931
Number of Pages
1-9
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1117/12.617805
Copyright Status
Unknown
Socpus ID
31744441016 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/31744441016
STARS Citation
Dolguikh, M. V.; Muravjov, A. V.; and Peale, R. E., "Toward Hot-Hole Thz Lasers In Homoepitaxial Si And Gaas With Layered Doping" (2005). Scopus Export 2000s. 3427.
https://stars.library.ucf.edu/scopus2000/3427