Title

Design And Integration Of Novel Scr-Based Devices For Esd Protection In Cmos/Bicmos Technologies

Keywords

Electrostatic discharge (ESD); High-holding low-voltage trigger silicon controlled rectifier (HH-LVTSCR); Holding voltage; Latchup; Voltage snapback

Abstract

Robust and novel devices called high-holding low-voltage trigger silicon controlled rectifiers (HH-LVTSCRs) for electrostatic discharge (ESD) protection of integrated circuits (ICs) are designed, fabricated and characterized. The S-type current-voltage (I-V) characteristics of the HH-LVTSCRs are adjustable to different operating conditions by changing the device dimensions and terminal interconnections. Comparison between complementary n- and p-type HH-LVTSCR devices shows that n-type devices perform better than p-type devices when a low holding voltage (VH) is allowed during the on-state of the ESD protection structure, but when a relatively high holding voltage is required, p-type devices perform better. Results further demonstrate that HH-LVTSCRs with a multiple-finger layout render high levels of ESD protection per unit area, applicable in the design of ICs with stringent ESD protection requirements of over 15 kV IEC. © 2005 IEEE.

Publication Date

12-1-2005

Publication Title

IEEE Transactions on Electron Devices

Volume

52

Issue

12

Number of Pages

2682-2689

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TED.2005.859662

Socpus ID

29244468025 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/29244468025

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