Title

First Mmw Characterization Of Eras/Inalgaas/Inp Semimetal-Semiconductor- Schottky Diode (S 3) Detectors For Passive Millimeter-Wave And Infrared Imaging

Keywords

Low noise operation; Millimeter-wave imaging; Responsivity; Schottky diodes; Semimetal; Zero bias detectors

Abstract

We present the first mm-wave characterization of Semimetal Semiconductor Schottky (S 3) diodes for direct detector applications from 94 GHz to 30 THz. The S 3 devices use molecular-beam epitaxy growth of binary compounds that are closely lattice-matched and crystallographically perfect across the heterointerface to reduce 1/f and burst noise while maintaining ultra-high-frequency performance. The S 3 diodes are fabricated from an InAlGaAs/InP based material system with both the Schottky layer and contact layer having n and n + doping levels. The semimetal Schottky contact is ErAs which is grown insitu during the MBE growth. By varying the InAlAs percentage content in the epitaxial layer structure, the diode de I-V characteristics and its zero bias responsivity are optimized. Diode s-parameter data from dc-100 GHz is used to determine the diode responsivity as a function of frequency and diode capacitance and resistance. These measurements then allow the device intrinsic and extrinsic equivalentcircuit elements to be optimized for direct detection from 94 GHz to ~30 THz.

Publication Date

10-25-2005

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

5789

Number of Pages

80-83

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1117/12.604118

Socpus ID

26844467303 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/26844467303

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