Title

Fabrication Of Hybrid N-Znmgo/N-Zno/P-Algan/P-Gan Light-Emitting Diodes

Keywords

GaN; Heterostructure; Light-emitting diodes (LEDs); UV emitter; ZnO

Abstract

We report on the fabrication of UV light-emitting diodes (LEDs) based on a p-n junction n-ZnMgO/n-ZnO/p-AlGaN/p-GaN semiconductor triple-heterostructure. Radio-frequency plasma-assisted molecular beam epitaxy was used to grow the complete heterostructure on p-AlGaN/p-GaN c-plane sapphire templates. Cross-sectional transmission electron microscopy showed single-crystal quality of the pseudomorphically grown ZnO active region of the device. The LEDs were fabricated by a process involving both wet and dry etching. Electroluminescence emission most likely associated with ZnO excitonic transition was observed up to 370°C. The results show the potential of ZnO-based materials for UV emitters of potentially lower cost and with comparable or higher emission intensity than comparable AlGaN/GaN devices. © 2005 The Japan Society of Applied Physics.

Publication Date

10-11-2005

Publication Title

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volume

44

Issue

10

Number of Pages

7296-7300

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1143/JJAP.44.7296

Socpus ID

31544434282 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/31544434282

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