Title

Electron Trapping Effects In C- And Fe-Doped Gan And Algan

Keywords

Cathodoluminescence; Diffusion length; EBIC; III-Nitrides; Lifetime

Abstract

Iron- and carbon-doped GaN and iron-doped Al0.2Ga0.8N irradiated by low energy electron beam of scanning electron microscope were studied by cathodoluminescence and electron beam-induced current techniques. Irradiation is shown to induce a systematic decay of the cathodoluminescence intensity, which is accompanied by increased electronic carrier diffusion length, indicating the increase of carrier lifetime. Temperature-dependent cathodoluminescence measurements yielded activation energies for irradiation-induced effects of 210, 230, and 360 meV for GaN:C, GaN:Fe, and Al0.2Ga0.8N:Fe, respectively. These observations are consistent with trapping of non-equilibrium electrons on deep, non-ionized acceptor levels. © 2005 Elsevier Ltd. All rights reserved.

Publication Date

10-1-2005

Publication Title

Solid-State Electronics

Volume

49

Issue

10

Number of Pages

1662-1668

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.sse.2005.08.002

Socpus ID

27744479879 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/27744479879

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