Title
Microstructural And Electrical Resistance Analysis Of Laser-Processed Sic Substrates For Wide Bandgap Semiconductor Materials
Abstract
Highly conductive phases have been generated on different polytypes of SiC substrates using a laser direct-write technique. Incorporation of both n-type and p-type impurities into the SiC substrates was accomplished by laser irradiation in dopant-containing ambients. X-ray diffraction, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy have been used to detect the presence of the dopant atoms and the compositional variation induced by laser irradiation. Scanning electron microscopy was used to study the microstructure, morphology and dimensions of the converted regions. The conversion in electric resistance has been attributed to both structural and compositional variations observed for the irradiated tracks. © 2005 Springer Science + Business Media, Inc.
Publication Date
8-1-2005
Publication Title
Journal of Materials Science
Volume
40
Issue
15
Number of Pages
3969-3981
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1007/s10853-005-2810-1
Copyright Status
Unknown
Socpus ID
24344464405 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/24344464405
STARS Citation
Salama, I. A.; Quick, N. R.; and Kar, A., "Microstructural And Electrical Resistance Analysis Of Laser-Processed Sic Substrates For Wide Bandgap Semiconductor Materials" (2005). Scopus Export 2000s. 3820.
https://stars.library.ucf.edu/scopus2000/3820