Title

A New Equivalent Circuit Model Of Igbt For Simulation Of Current Sensors

Keywords

Power semiconductor devices; Sensors

Abstract

A new equivalent circuit model for insulated gate bipolar transistor is presented. It takes into account both electron and hole conduction in sensors and is incorporated with SPICE3 for the simulation of three types of current sensors, namely active, bipolar, and MOS sensors. It adopts a multiMOS model to include the doping variation in the MOS body. The results agree well with the current sensing measurements within an average error of 4.4%. © 2005 IEEE.

Publication Date

7-1-2005

Publication Title

IEEE Transactions on Power Electronics

Volume

20

Issue

4

Number of Pages

725-731

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TPEL.2005.850909

Socpus ID

22944486980 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/22944486980

This document is currently not available here.

Share

COinS