Title

Interfacial Thermal Conductivity: Insights From Atomic Level Simulation

Abstract

We analyze the results of molecular-dynamics simulations of the interfacial (Kapitza) resistance of representative grain boundaries in Si. Simulations of the interactions of phonon wave packets with the Si grain boundaries show that the scattering process depends strongly on both the branch and wavelength of the incident phonons. This approach has the potential for providing detailed spectral information to mesoscale simulations of thermal transport in interfacial systems. © 2005 Springer Science + Business Media, Inc.

Publication Date

6-1-2005

Publication Title

Journal of Materials Science

Volume

40

Issue

12

Number of Pages

3143-3148

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1007/s10853-005-2676-2

Socpus ID

20644439763 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/20644439763

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