Title

Sic Super Junction Power Devices: Modeling And Analysis

Keywords

Power devices; SiC; Super-junction; Wide-band gap semiconductors

Abstract

In this paper, we extend the super junction concept to SiC high voltage devices and further expand the SiC theoretical limit. It is shown that the super-junction concept can reduce the theoretical specific on-resistance by several times to several orders of magnitude for both silicon and SiC. The unique merit of SiC super-junction devices is that the required P and N pillars have a much smaller aspect ratio and may be easier to form than their silicon counterparts. Furthermore, SiC super-junction devices are much less sensitive to charge imbalance issue than silicon SJ devices.

Publication Date

1-1-2005

Publication Title

Materials Science Forum

Volume

483-485

Number of Pages

957-960

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.4028/0-87849-963-6.957

Socpus ID

35148885679 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/35148885679

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