Title

Effect Of Stresses In Molybdenum Back Contact Film On Properties Of Cigss Absorber Layer

Abstract

Analysis of CuIn1-xGaxSe2-ySy (CIGSS) absorber and molybdenum back contact layer was carried out to understand the changes in the microstructure of CIGSS layer as a function of the deposition conditions and the nature of stress in the underlying Mo film. All the depositions were carried out on 10 cm × 10 cm glass substrates. Compressive and tensile stressed molybdenum films were prepared with combinations of deposition parameters; power and pressure. CIGSS absorber layer was prepared by depositing metallic precursors using DC magnetron sputtering followed by selenization and sulfurization. Molybdenum layer deposited at 300 W and 3 × 10-4 Torr pressure produced compressive stress with compact, well adherent and lower sheet resistance as compared to the tensile stressed film deposited at 200 W and 5 × 10-3 Torr. The crystallinity of the CIGSS film was found not to depend on the stress in the underlying molybdenum film. However, the adhesion at the Mo/CIGSS as well as gallium profile at the Mo/CIGSS interface were affected by the stress. © 2005 Materials Research Society.

Publication Date

1-1-2005

Publication Title

Materials Research Society Symposium Proceedings

Volume

865

Number of Pages

423-429

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1557/proc-865-f14.13

Socpus ID

30544440826 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/30544440826

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