Title
Synthesis And Growth Mechanism Of Silicon Nitride Nanostructures
Keywords
Growth mechanism; Polyureasilazane; Pyrolysis; Si N nanostructures 3 4
Abstract
A new method to synthesize Si3N4 nanostructures via catalyst-assisted polymeric precursor pyrolysis is present in this article. The as-prepared nanobelts are single crystals with a uniform thickness and width along the entire length, and contain no detectable defects such as dislocations or stacking faults. The thickness and width of Si3N4 nanobelts range from 40 to 60 nm and 600 to 1200 nm, respectively, and the lengths can be up to several millimeters. The growth directions of α-Si3N4 nanobelts are [101] and [100]. A solid-liquid-solid and gas-solid reaction/crystallization is proposed for the growth of S3N4 nonastructures. © 2005 Trans Tech Publications, Switzerland.
Publication Date
1-1-2005
Publication Title
Materials Science Forum
Volume
475-479
Issue
II
Number of Pages
1239-1242
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.4028/0-87849-960-1.1239
Copyright Status
Unknown
Socpus ID
17044416850 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/17044416850
STARS Citation
Xie, Zhipeng; Yang, Weiyou; Miao, Hezhuo; Zhang, Ligong; and An, Linan, "Synthesis And Growth Mechanism Of Silicon Nitride Nanostructures" (2005). Scopus Export 2000s. 4733.
https://stars.library.ucf.edu/scopus2000/4733