Title

Gain Improvement For The Thz P-Ge Laser Using Neutron Transmutation Doped Active Crystal

Abstract

A far-infrared p-type germanium laser with active crystal prepared from ultra pure single-crystal Ge by neutron transmutation doping (NTD) is demonstrated. Calculations show that the high uniformity of Ga acceptor distribution achieved by NTD significantly improves average gain. The negative factor of stronger ionized impurity scattering due to high compensation in NTD Ge is shown to be unremarkable for the gain at moderate doping concentrations sufficient for laser operation. Experimentally, this first NTD laser is found to have lower current-density lasing threshold than the best of a number of melt-doped laser crystals studied for comparison.

Publication Date

12-20-2004

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

5411

Number of Pages

216-227

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1117/12.542695

Socpus ID

10044244942 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/10044244942

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