Title
An Analytical Threshold Voltage Model Of Nmosfets With Hot-Carrier Induced Interface Charge Effect
Abstract
An analytical threshold voltage model of NMOSFETs including the effect of hot-carrier-induced interface charges is presented. A step function describing the interface charge distribution along the channel is used to account for the hot carrier induced damage, and a pseudo-2D method is applied to derive the surface potential. The threshold voltage model is then developed by solving the gate-to-source voltage at the onset of surface inversion where the minimum surface potential equals the channel potential. Both the DIBL and body effects are included in the present model as well. Model is successfully verified using simulation data obtained from TCAD (technology-based computer-aided design). © 2004 IEEE.
Publication Date
12-1-2004
Publication Title
Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics
Number of Pages
601-605
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
48649096105 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/48649096105
STARS Citation
Huang, Kuo Yin; Ho, C. S.; Tang, Ming; and Liou, Juin J., "An Analytical Threshold Voltage Model Of Nmosfets With Hot-Carrier Induced Interface Charge Effect" (2004). Scopus Export 2000s. 4799.
https://stars.library.ucf.edu/scopus2000/4799