Title

Scr Device For Esd Protection In Sub-Micron Triple Well Silicided Cmos Processes

Keywords

CMOS; Communication transceiver; Electrostatic discharge (ESD); N- and p-type high- Holding- Low-trigger- Voltage- Silicon- Controlled- Rectifier (HHLVTSCR); Silicon controlled rectifier (SCR); Supply clamp; Transmission line pulse (TLP)

Abstract

A High- Holding- Low- Trigger- Voltage- Silicon-Controlled- Rectifier (HHLVTSCR) is fabricated in a sub-micron triple well CMOS technology in complementary n- and p-rypes. The HHLVTSCRs occupy less area than typical Electrostatic Discharge (ESD) protection devices and the corresponding I-V characteristics are adjustable to different protection requirements. The characteristics of these devices are tuned by the appropriate choice of the internal dimensions and device interconnections. Both n- and p-type devices are characterized using the Transmission Line Pulse (TLP) technique. Comparisons between n- and p-type devices show that n-type devices perform better than p-type devices for low holding voltages (VH), but for relatively high holding voltages the p-type devices show better characteristics. Results demonstrate that ESD protection capabilities in n- and p-type devices are adequate for the design of multiple IC's ESD protection schemes with very low leakage current and without latchup concerns. © 2004 IEEE.

Publication Date

12-1-2004

Publication Title

Proceedings of the IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS

Number of Pages

65-70

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

28444450408 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/28444450408

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