Title
Compact Modeling For Drain Current Of Short-Channel Mosfets Including Source/Drain Resistance Effect
Abstract
In this paper, the DC characteristics of MOSFETs are investigated by means of an analytical approach with considerations of the source/drain parasitic resistance. Experimental data of MOS devices for DRAM design and results of TCAD simulation are used to verify the accuracy of theoretical calculation. It is found that both the source and drain resistances can induce a large reduction in the drain current in the linear region, but only the source resistance can cause a large reduction in the drain current in the saturation region. Moreover, the drain current deduction due to the source/drain resistance increases with decreasing channel length and oxide thickness. © 2004 IEEE.
Publication Date
12-1-2004
Publication Title
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
Volume
2
Number of Pages
930-934
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
21644489530 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/21644489530
STARS Citation
Ho, C. S.; Liou, Juin J.; Lo, H. L.; Chang, Y. H.; and Chang, Cospy, "Compact Modeling For Drain Current Of Short-Channel Mosfets Including Source/Drain Resistance Effect" (2004). Scopus Export 2000s. 4841.
https://stars.library.ucf.edu/scopus2000/4841