Title

Extracting The Model Parameters Of Non-Ideal Junctions Based On Explicit Analytical Solutions Of I-V Characteristics

Abstract

We present a new method to extract the intrinsic and extrinsic model parameters of semiconductor junctions containing parasitic resistance and shunt conductance. The method, which is based on a previously defined Integral Difference Function D, uses the exact explicit analytical solutions of the I-V characteristics, The presence of Lambert W function terms in the explicit analytical solutions would make parameter extraction by direct numerical fitting cumbersome. However, the resulting D is reduced to a purely algebraic equation from whose coefficients the intrinsic and extrinsic model parameters are then readily determined. The procedure is illustrated for four cases of parasitic series resistance - shunt conductance combinations, and applied to synthetic I-V characteristics to illustrate the computation process. © 2004 IEEE.

Publication Date

12-1-2004

Publication Title

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volume

2

Number of Pages

935-940

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

21644471239 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/21644471239

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