Title
Rf Performance Degradation In Pmos Transistors Due To Hot Carrier And Soft Breakdown Effects
Abstract
Hot Carrier and Soft Breakdown stress on pMOS RF devices has been examined. The cut-off frequency and the S-parameters degrade with stress. The measured threshold voltage shifts negatively and mobility decreases after stress. It is our understanding that this is the first attempt to investigate hot carrier and soft breakdown effects on RF performance of pMOS transistors and first reporting of negative shift in threshold voltage. © 2004 IEEE.
Publication Date
12-1-2004
Publication Title
2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers
Number of Pages
309-310
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
20344378276 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/20344378276
STARS Citation
Liu, Yi; Sadat, Anwar; Yu, Chuanzhao; and Yuan, J. S., "Rf Performance Degradation In Pmos Transistors Due To Hot Carrier And Soft Breakdown Effects" (2004). Scopus Export 2000s. 4866.
https://stars.library.ucf.edu/scopus2000/4866