Title

Studies Of Electron Trapping In Iii-Nitrides

Abstract

Electron injection using electron beam of a Scanning Electron Microscope into (Al)GaN doped with Magnesium (Mg) or Manganese (Mn) leads to a multiple-fold increase of minority carrier diffusion length and lifetime. The systematic optical and electrical studies were carried out on the representative range of GaN and AlGaN samples to determine the activation energy for the effects of electron injection. For (Al)GaN doped with Mg, the activation energy is close to the thermal ionization energy of the Mg-acceptor and is consistent with Al content in III-N lattice. In the case of Mn-doped GaN, electron-beam induced excitation from the Mn3+ neutral acceptor state was demonstrated to thermalize with activation energy of 360 meV.

Publication Date

12-1-2004

Publication Title

Proceedings - Electrochemical Society

Volume

6

Number of Pages

512-521

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

17044414538 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/17044414538

This document is currently not available here.

Share

COinS