Title

Monte Carlo Simulation Of Multilayer Delta Doped Germanium Thz Laser

Abstract

The numerical simulations of carrier dynamics of THz radiation in selective doped multi-layer germanium (Ge) laser structures were performed by the Monte Carlo method. It was observed that higher gain in selectively doped Ge structures permitted smaller active volume and provided a planar realization of p-Ge laser that facilitated heat extraction. It was found that higher gain allowed lower electric field threshold that lowered Joule heating. The Monte Carlo simulation were performed using classical motion equations in external E and B fields and scattering probabilities to solve the Boltzmann equations. The results of the calculations show a possibility of laser operation even at liquid nitrogen temperatures.

Publication Date

12-1-2004

Publication Title

Proceedings of the 4th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD '04

Number of Pages

97-98

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

14244263149 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/14244263149

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