Title

Nanocrystalline Indium Oxide-Doped Tin Oxide Thin Film As Low Temperature Hydrogen Sensor

Keywords

Low temperature hydrogen sensor; Nanocrystalline indium oxide-doped tin oxide; Pt-sputtered thin film

Abstract

Hydrogen gas, within the concentration range of 100ppm-4vol.%, is successfully sensed at lower operating temperatures, 25 and 50°C, using the Pt-sputtered sol-gel dip-coated nanocrystalline (6-7nm) 6.5mol% In 2O3-doped SnO2 semiconductor thin (100-150nm) film sensor. Typically, for 1000ppm of hydrogen, the maximum sensitivity values of 32 and 1600% are observed at 25 and 50°C, respectively; while for 2vol.% hydrogen, the maximum sensitivity values of 50 and 70,000% are recorded at 25 and 50°C, respectively. At 25°C, for 4vol.% (explosive limit as set by NASA) hydrogen, the maximum hydrogen gas sensitivity values of 107,887 and 2083% are observed for the Pt-sputtered thin films calcined at 500 and 600°C, respectively. © 2003 Elsevier B.V. All rights reserved.

Publication Date

2-1-2004

Publication Title

Sensors and Actuators, B: Chemical

Volume

97

Issue

2-3

Number of Pages

256-265

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.snb.2003.08.025

Socpus ID

1642478040 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/1642478040

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