Title

Chemical Mechanical Polishing Of Tantalum: Oxidizer And Ph Effects

Abstract

Chemical mechanical polishing of tantalum was carried out in alumina-dispersed deionized water, 5% H2O2 as well as 0. 25 M KlO3 solution at pH ranging from 1 to 10. High polishing rates were observed in H2O2-containing slurry at low pH values, while KlO3 slurry showed no appreciable effect of pH and the polishing rates were low. While tantalum pentoxide readily forms in either slurry, electrochemical observations indicate a higher dissolution rate of the oxide in H2O2 slurry, particularly at low pH accounting for the greater polishing rate. © 2004 Kluwer Academic Publishers.

Publication Date

2-1-2004

Publication Title

Journal of Materials Science: Materials in Electronics

Volume

15

Issue

2

Number of Pages

87-90

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1023/B:JMSE.0000005381.96813.0f

Socpus ID

0742268353 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0742268353

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