Title

Ti:Sapphire Crystal Used In Ultrafast Lasers And Amplifiers

Keywords

A1. Doping; A2. Single crystal growth; B1. Titanium doped sapphire; B3. Solid state lasers

Abstract

The improvement of peak power of femeto-laser depends on the compression of pulse width. The titanium-doped sapphire crystal is the excellent laser crystal with the shortest pulse width. Its theoretical pulse width limit is 3fs. At present 50-TW tabletop Ti:sapphire lasers have been commercialized. In this paper, comparison of Ti:sapphire crystals grown by temperature gradient technology (TGT) and heat exchange method (HEM) is presented, and results show that the laser quality of Ti:sapphire crystals grown by TGT is similar to or higher than those grown by HEM. Ø 10-30 mm high optical homogeneity Ti:sapphire amplifiers were fabricated successfully and 5-40 TW high power were obtained. We believe that up to Ø 100 Ti:sapphire amplifiers (grown by TGT) can be obtained for ultrahigh power laser systems using all Ti:sapphire crystals in near future. © 2003 Elsevier B.V. All rights reserved.

Publication Date

2-1-2004

Publication Title

Journal of Crystal Growth

Volume

261

Issue

4

Number of Pages

514-519

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.jcrysgro.2003.09.049

Socpus ID

0347599262 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0347599262

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