Title

Cmos Rf And Dc Reliability Subject To Hot Carrier Stress And Oxide Soft Breakdown

Keywords

Circuit reliability; Dielectric breakdown; Hot carriers; Low-noise amplifier; MOSFETs; Voltage-controlled oscillators

Abstract

Hot carrier and soft breakdown effects are evaluated experimentally. A methodology to systematically study hot carrier and soft breakdown effects on RF circuits is developed. Device stress measurement and SpectreRF simulation are conducted to evaluate the impact of hot carrier and soft breakdown effects on RF circuits such as low-noise amplifier and voltage-controlled oscillator performances. Two design techniques to build reliable RF circuits are proposed.

Publication Date

3-1-2004

Publication Title

IEEE Transactions on Device and Materials Reliability

Volume

4

Issue

1

Number of Pages

92-98

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TDMR.2004.824365

Socpus ID

2342599663 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/2342599663

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