Title

Bic Formation And Boron Diffusion In Relaxed Si0.8Ge 0.2

Abstract

The relationships between Boron Interstitial Cluster (BIC) evolution and boron diffusion in relaxed Si0.8Ge0.2 have been investigated. Structures were grown by Molecular Beam Epitaxy (MBE) with surface boron wells of variant composition extending 0.25 μm into the substrate, as well as boron marker layers positioned 0.50 μm below the surface. The boron well concentrations are as follows: 0, 7.5×1018,1. 5×1019, and 5.0×1019 atoms/cm3. The boron marker layers are approximately 3 nm wide and have a peak concentration of 5 ×1018 atoms/cm3. Samples were ion implanted with 60 keV Si+ at a dose of 1×1014 atoms/cm 2 and subsequently annealed at 675°C and 750°C for various times. Plan-view Transmission Electron Microscopy (PTEM) was used to monitor the agglomeration of injected silicon interstitials and the evolution of extended defects in the near surface region. Secondary Ion Mass Spectroscopy (SIMS) concentration profiles facilitated the characterization of boron diffusion behaviors during annealing. Interstitial supersaturation conditions and the resultant defect structures of ion implanted relaxed Si0.8Ge 0.2 in both the presence and absence of boron have been characterized.

Publication Date

1-1-2004

Publication Title

Materials Research Society Symposium - Proceedings

Volume

810

Number of Pages

313-317

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1557/proc-810-c7.4

Socpus ID

5544297202 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/5544297202

This document is currently not available here.

Share

COinS