Title
Dispersion-Managed Breathing Mode-Locking: Generation Of High-Power 185 Fs Pulses From A Semiconductor Laser
Abstract
The development of dispersion-managed breathing-mode semiconductor mode-locked laser scheme was presented. The chirped-pulse amplification concepts were implemented inside a semiconductor ring laser cavity. The pulse were stretch prior to entering the gain mediumm and compressed before encountering the saturable absorber (SA). The lower peak power of the stretched pulses minimizes the amount of self phase-modulation generated in the semiconductor gain media. The stretching and compression of the intracavity pulses and the external cavity pulses were implemented by dual-pass grating stretcher/compressors with internal telescopes.
Publication Date
1-1-2004
Publication Title
Optics and Photonics News
Volume
15
Issue
12
Number of Pages
44-
Document Type
Article
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
10644276017 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/10644276017
STARS Citation
Kesan, Bojan; Archundia, Luis; and Delfyett, Peter J., "Dispersion-Managed Breathing Mode-Locking: Generation Of High-Power 185 Fs Pulses From A Semiconductor Laser" (2004). Scopus Export 2000s. 5791.
https://stars.library.ucf.edu/scopus2000/5791