Title

Statistical Modeling Of Mos Devices Based On Parametric Test Data For Improved Ic Manufacturing

Abstract

In the manufacturing of VLSI circuits, engineering designs should take into consideration random variations arising from processing. In this paper, statistical modeling of MOS devices is reviewed, and effective and practical models are developed to predict the performance spread of MOS circuits due to the process variations. To illustrate their applications, the models are applied to the 0.25 μm CMOS technology, and measured data are included in support of the model calculations.

Publication Date

1-1-2001

Publication Title

Proceedings of the IEEE Hong Kong Electron Devices Meeting

Number of Pages

31-37

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

0034829305 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0034829305

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