Title

An Unassisted, Low Trigger-, And High Holding-Voltage Scr (Uscr) For On-Chip Esd-Protection Applications

Keywords

Electrostatic discharge (ESD); High holding voltage; Latch-up; Low trigger voltage; Silicon; Silicon-controlled rectifier (SCR); Trigger circuits; Voltage control

Abstract

A new silicon-controlled rectifier (SCR) is proposed and realized in a 0.35-μm/3.3-V fully salicided BiCMOS process for electrostatic-discharge (ESD) applications. Without using an external trigger circuitry, the unassisted SCR has a trigger voltage as low as 7 V to effectively protect deep-submicrometer MOS circuits, a holding voltage higher than the supply voltage to minimize transient influence and avoid latch-up issue, and a second snapback current density exceeding 60 mA/μm to provide robust ESD-protection solutions. © 2007 IEEE.

Publication Date

12-1-2007

Publication Title

IEEE Electron Device Letters

Volume

28

Issue

12

Number of Pages

1120-1122

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/LED.2007.909838

Socpus ID

36549003113 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/36549003113

This document is currently not available here.

Share

COinS