Title

Laser Conversion Of Electrical Properties For Silicon Carbide Device Applications

Abstract

Highly conductive tracks on silicon carbide were produced using a direct conversion technique involving irradiation with a laser beam. The scanning electron microscopy and atomic force microscopic images of the laser irradiated silicon carbide tracks show the presence of dispersed globules on the irradiated track. High temperature electronic devices can be produced using this technique by directly writing conducting and insulating tracks on silicon carbide substrates.

Publication Date

1-1-2001

Publication Title

Journal of Laser Applications

Volume

13

Issue

1

Number of Pages

26-31

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.2351/1.1340336

Socpus ID

0034817488 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0034817488

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