Title

A Robust Polysilicon-Assisted Scr In Esd Protection Application

Keywords

Electro-static discharge (ESD); Human body model (HBM); Polysilicon-assisted; Robustness performance; Silicon-controlled rectifier (SCR)

Abstract

A novel polysilicon-assisted silicon-controlled rectifier (SCR) is presented and analyzed in this paper, which is fabricated in HHNEC's 0.18 μm EEPROM process. The polysilicon-assisted SCRs take advantage of polysilicon layer to help by pass electro-static discharge (ESD) current without occupying extra layout area. TLP current-voltage (I-V) measurement results show that given the same layout areas, robustness performance of polysilicon-assisted SCRs can be improved to 3 times of conventional MLSCR's. Moreover, one-finger such polysilicon-assisted SCRs, which occupy only 947 μm2 layout area, can undergo 7-kV HBM ESD stress. Results further demonstrate that the S-type I-V characteristics of polysilicon-assisted SCRs are adjustable to different operating conditions by changing the device dimensions. Compared with traditional SCRs, this new SCR can bypass more ESD currents and consumes smaller IC area. © 2007 Springer-Verlag.

Publication Date

11-1-2007

Publication Title

Journal of Zhejiang University: Science A

Volume

8

Issue

12

Number of Pages

1879-1883

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1631/jzus.2007.A1879

Socpus ID

36849020478 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/36849020478

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