Title

Laser Doping Fabrication Of Energy Conversion Devices

Keywords

Laser doping; LED; SIMS; TEM; Wide bandgap semiconductor

Abstract

Improved efficiency in semiconductor energy conversion devices requires processes that can tune electromagnetic energy interaction and increase charge carrier densities without creating defects. Doping is the technology used in semiconductor processing to add impurities principally to adjust charge carrier type and densities. Ion implantation, the conventional doping technology, can introduce defects. P-type doping is difficult in wide bandgap semiconductors which are stable in high temperature, corrosive environments. We have doped wide bandgap semiconductors (WBGSs) with both n- and p-type dopants using a laser doping technique. Specific dopant types and substrates include nitrogen and cobalt in diamond-like carbon; magnesium in GaN; and aluminum, nitrogen, chromium, boron, gallium, europium, erbium and selenium in silicon carbide using 1064 nm and 532 nm wavelength NdrYAG laser sources and 248 nm excimer laser sources. Currently dopant species that provide single hole or electron sites are used in semiconductor devices. Laser doping has successfully incoroprated multi-donor and multi-acceptor dopants in WBGSs. These process parameters will be discussed for the fabrication of a p-n junction energy device. Copyright © 2007 MS&T07®.

Publication Date

12-1-2007

Publication Title

Materials Science and Technology Conference and Exhibition, MS and T'07 - "Exploring Structure, Processing, and Applications Across Multiple Materials Systems"

Volume

2

Number of Pages

1100-1110

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

58349092354 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/58349092354

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