Title
Effect Of Sn Dopant On The Properties Of Zno Nanorod Arrays
Keywords
Photoluminescence; RPP; Sn-doped ZnO nanorod arrays
Abstract
Sn-doped ZnO nanorod arrays were synthesized by a novel method combining the aqueous solution process with post-growth rapid photo thermal processing (RPP). The post-growth RPP of Sn-doped ZnO nanostructures at 700°C in vacuum was found to result in a drastic decrease of the near-bandgap photoluminescence intensity. A comparison of the impact of RPP in Sn and Al doped samples is performed and the reasons of near-bandgap photoluminescence intensity decrease in Sn-doped samples are discussed. © 2007 IEEE.
Publication Date
12-1-2007
Publication Title
Proceedings of the International Semiconductor Conference, CAS
Volume
2
Number of Pages
349-352
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/SMICND.2007.4519732
Copyright Status
Unknown
Socpus ID
49149092203 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/49149092203
STARS Citation
Lupan, O.; Chow, L.; Ursaki, V.; Monaico, E.; and Tiginyanu, I., "Effect Of Sn Dopant On The Properties Of Zno Nanorod Arrays" (2007). Scopus Export 2000s. 6135.
https://stars.library.ucf.edu/scopus2000/6135