Title
Dynamic Stress Effect On Ldmos Rf Performances
Abstract
Dynamic stress effect on LDMOS RF performances have been evaluated. Measured S21 shows less degradation subject to dynamic stress than DC stress. RF power amplifier's output power and power-added efficiency degrade after dynamic hot electron stress. © 2007 IEEE.
Publication Date
12-1-2007
Publication Title
PESC Record - IEEE Annual Power Electronics Specialists Conference
Number of Pages
995-996
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/PESC.2007.4342125
Copyright Status
Unknown
Socpus ID
48349144539 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/48349144539
STARS Citation
Jiang, L. and Yuan, J. S., "Dynamic Stress Effect On Ldmos Rf Performances" (2007). Scopus Export 2000s. 6141.
https://stars.library.ucf.edu/scopus2000/6141
COinS